SherbyNet - /page/wikibook/entry.mu

Micron Document

<!DOCTYPE html>

<title>Programmable metallization cell</title>

</head>

<span id="openzim-page-title" class="mw-page-title-main"><span class="mw-page-title-main">Programmable metallization cell</span></span>

</h1>

</header>

/* start https://en.wikipedia.org/ */

.mw-parser-output .hlist dl,.mw-parser-output .hlist ol,.mw-parser-output .hlist ul{margin:0;padding:0}.mw-parser-output .hlist dd,.mw-parser-output .hlist dt,.mw-parser-output .hlist li{margin:0;display:inline}.mw-parser-output .hlist.inline,.mw-parser-output .hlist.inline dl,.mw-parser-output .hlist.inline ol,.mw-parser-output .hlist.inline ul,.mw-parser-output .hlist dl dl,.mw-parser-output .hlist dl ol,.mw-parser-output .hlist dl ul,.mw-parser-output .hlist ol dl,.mw-parser-output .hlist ol ol,.mw-parser-output .hlist ol ul,.mw-parser-output .hlist ul dl,.mw-parser-output .hlist ul ol,.mw-parser-output .hlist ul ul{display:inline}.mw-parser-output .hlist .mw-empty-li{display:none}.mw-parser-output .hlist dt::after{content:": "}.mw-parser-output .hlist dd::after,.mw-parser-output .hlist li::after{content:" · ";font-weight:bold}.mw-parser-output .hlist dd:last-child::after,.mw-parser-output .hlist dt:last-child::after,.mw-parser-output .hlist li:last-child::after{content:none}.mw-parser-output .hlist dd dd:first-child::before,.mw-parser-output .hlist dd dt:first-child::before,.mw-parser-output .hlist dd li:first-child::before,.mw-parser-output .hlist dt dd:first-child::before,.mw-parser-output .hlist dt dt:first-child::before,.mw-parser-output .hlist dt li:first-child::before,.mw-parser-output .hlist li dd:first-child::before,.mw-parser-output .hlist li dt:first-child::before,.mw-parser-output .hlist li li:first-child::before{content:" (";font-weight:normal}.mw-parser-output .hlist dd dd:last-child::after,.mw-parser-output .hlist dd dt:last-child::after,.mw-parser-output .hlist dd li:last-child::after,.mw-parser-output .hlist dt dd:last-child::after,.mw-parser-output .hlist dt dt:last-child::after,.mw-parser-output .hlist dt li:last-child::after,.mw-parser-output .hlist li dd:last-child::after,.mw-parser-output .hlist li dt:last-child::after,.mw-parser-output .hlist li li:last-child::after{content:")";font-weight:normal}.mw-parser-output .hlist ol{counter-reset:listitem}.mw-parser-output .hlist ol>li{counter-increment:listitem}.mw-parser-output .hlist ol>li::before{content:" "counter(listitem)"\a0 "}.mw-parser-output .hlist dd ol>li:first-child::before,.mw-parser-output .hlist dt ol>li:first-child::before,.mw-parser-output .hlist li ol>li:first-child::before{content:" ("counter(listitem)"\a0 "}

/* end https://en.wikipedia.org/ */

</style><style data-mw-deduplicate="TemplateStyles:r1246091330">

/* start https://en.wikipedia.org/ */

.mw-parser-output .sidebar{width:22em;float:right;clear:right;margin:0.5em 0 1em 1em;background:var(--background-color-neutral-subtle,#f8f9fa);border:1px solid var(--border-color-base,#a2a9b1);padding:0.2em;text-align:center;line-height:1.4em;font-size:88%;border-collapse:collapse;display:table}body.skin-minerva .mw-parser-output .sidebar{display:table!important;float:right!important;margin:0.5em 0 1em 1em!important}.mw-parser-output .sidebar-subgroup{width:100%;margin:0;border-spacing:0}.mw-parser-output .sidebar-left{float:left;clear:left;margin:0.5em 1em 1em 0}.mw-parser-output .sidebar-none{float:none;clear:both;margin:0.5em 1em 1em 0}.mw-parser-output .sidebar-outer-title{padding:0 0.4em 0.2em;font-size:125%;line-height:1.2em;font-weight:bold}.mw-parser-output .sidebar-top-image{padding:0.4em}.mw-parser-output .sidebar-top-caption,.mw-parser-output .sidebar-pretitle-with-top-image,.mw-parser-output .sidebar-caption{padding:0.2em 0.4em 0;line-height:1.2em}.mw-parser-output .sidebar-pretitle{padding:0.4em 0.4em 0;line-height:1.2em}.mw-parser-output .sidebar-title,.mw-parser-output .sidebar-title-with-pretitle{padding:0.2em 0.8em;font-size:145%;line-height:1.2em}.mw-parser-output .sidebar-title-with-pretitle{padding:0.1em 0.4em}.mw-parser-output .sidebar-image{padding:0.2em 0.4em 0.4em}.mw-parser-output .sidebar-heading{padding:0.1em 0.4em}.mw-parser-output .sidebar-content{padding:0 0.5em 0.4em}.mw-parser-output .sidebar-content-with-subgroup{padding:0.1em 0.4em 0.2em}.mw-parser-output .sidebar-above,.mw-parser-output .sidebar-below{padding:0.3em 0.8em;font-weight:bold}.mw-parser-output .sidebar-collapse .sidebar-above,.mw-parser-output .sidebar-collapse .sidebar-below{border-top:1px solid #aaa;border-bottom:1px solid #aaa}.mw-parser-output .sidebar-navbar{text-align:right;font-size:115%;padding:0 0.4em 0.4em}.mw-parser-output .sidebar-list-title{padding:0 0.4em;text-align:left;font-weight:bold;line-height:1.6em;font-size:105%}.mw-parser-output .sidebar-list-title-c{padding:0 0.4em;text-align:center;margin:0 3.3em}@media(max-width:640px){body.mediawiki .mw-parser-output .sidebar{width:100%!important;clear:both;float:none!important;margin-left:0!important;margin-right:0!important}}body.skin--responsive .mw-parser-output .sidebar a>img{max-width:none!important}@media screen{html.skin-theme-clientpref-night .mw-parser-output .sidebar:not(.notheme) .sidebar-list-title,html.skin-theme-clientpref-night .mw-parser-output .sidebar:not(.notheme) .sidebar-title-with-pretitle{background:transparent!important}html.skin-theme-clientpref-night .mw-parser-output .sidebar:not(.notheme) .sidebar-title-with-pretitle a{color:var(--color-progressive)!important}}@media screen and (prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .sidebar:not(.notheme) .sidebar-list-title,html.skin-theme-clientpref-os .mw-parser-output .sidebar:not(.notheme) .sidebar-title-with-pretitle{background:transparent!important}html.skin-theme-clientpref-os .mw-parser-output .sidebar:not(.notheme) .sidebar-title-with-pretitle a{color:var(--color-progressive)!important}}@media print{body.ns-0 .mw-parser-output .sidebar{display:none!important}}

/* end https://en.wikipedia.org/ */

</style><table class="sidebar sidebar-collapse nomobile nowraplinks hlist"><tbody><tr><th class="sidebar-title"><a href="Computer_memory" title="Computer memory">Computer memory</a> and <a href="Computer_data_storage" title="Computer data storage">data storage</a> types</th></tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">General</div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Memory_cell_(computing)" title="Memory cell (computing)">Memory cell</a></li>

<li><a href="Memory_coherence" title="Memory coherence">Memory coherence</a></li>

<li><a href="Cache_coherence" title="Cache coherence">Cache coherence</a></li>

<li><a href="Memory_hierarchy" title="Memory hierarchy">Memory hierarchy</a></li>

<li><a href="Memory_access_pattern" title="Memory access pattern">Memory access pattern</a></li>

<li><a href="Memory_map" title="Memory map">Memory map</a></li>

<li><a href="Computer_data_storage#Secondary_storage" title="Computer data storage">Secondary storage</a></li>

<li><a href="Semiconductor_memory" title="Semiconductor memory">MOS memory</a>

<ul><li><a href="Floating-gate_MOSFET" title="Floating-gate MOSFET">floating-gate</a></li></ul></li>

<li><a href="Continuous_availability" title="Continuous availability">Continuous availability</a></li>

<li><a href="Areal_density_(computer_storage)" class="mw-redirect" title="Areal density (computer storage)">Areal density (computer storage)</a></li>

<li><a href="Block_(data_storage)" title="Block (data storage)">Block (data storage)</a></li>

<li><a href="Object_storage" title="Object storage">Object storage</a></li>

<li><a href="Direct-attached_storage" title="Direct-attached storage">Direct-attached storage</a></li>

<li><a href="Network-attached_storage" title="Network-attached storage">Network-attached storage</a>

<ul><li><a href="Storage_area_network" title="Storage area network">Storage area network</a></li>

<li><a href="Block-level_storage" title="Block-level storage">Block-level storage</a></li></ul></li>

<li><a href="Single-instance_storage" title="Single-instance storage">Single-instance storage</a></li>

<li><a href="Data_model" title="Data model">Structured data</a></li>

<li><a href="Unstructured_data" title="Unstructured data">Unstructured data</a></li>

<li><a href="Metadata" title="Metadata">Metadata</a></li>

<li><a href="Data_compression" title="Data compression">Data compression</a></li>

<li><a href="Data_corruption" title="Data corruption">Data corruption</a></li>

<li><a href="Data_cleansing" title="Data cleansing">Data cleansing</a></li>

<li><a href="Data_degradation" title="Data degradation">Data degradation</a></li>

<li><a href="Data_integrity" title="Data integrity">Data integrity</a></li>

<li><a href="Data_security" title="Data security">Data security</a></li>

<li><a href="Data_validation" title="Data validation">Data validation</a></li>

<li><a href="Data_validation_and_reconciliation" title="Data validation and reconciliation">Data validation and reconciliation</a></li>

<li><a href="Data_recovery" title="Data recovery">Data recovery</a></li>

<li><a href="Computer_data_storage" title="Computer data storage">Storage</a></li>

<li><a href="Data_cluster" class="mw-redirect" title="Data cluster">Data cluster</a></li>

<li><a href="Directory_(computing)" title="Directory (computing)">Directory</a></li>

<li><a href="Shared_resource" title="Shared resource">Shared resource</a></li>

<li><a href="File_sharing" title="File sharing">File sharing</a></li>

<li><a href="File_system" title="File system">File system</a></li>

<li><a href="Clustered_file_system" title="Clustered file system">Clustered file system</a></li>

<li><a href="Clustered_file_system#Distributed_file_systems" title="Clustered file system">Distributed file system</a></li>

<li><a href="Distributed_file_system_for_cloud" title="Distributed file system for cloud">Distributed file system for cloud</a></li>

<li><a href="Distributed_data_store" title="Distributed data store">Distributed data store</a></li>

<li><a href="Distributed_database" title="Distributed database">Distributed database</a></li>

<li><a href="Database" title="Database">Database</a></li>

<li><a href="Data_storage" title="Data storage">Data storage</a></li>

<li><a href="Data_store" title="Data store">Data store</a></li>

<li><a href="Data_deduplication" title="Data deduplication">Data deduplication</a></li>

<li><a href="Data_structure" title="Data structure">Data structure</a></li>

<li><a href="Data_redundancy" title="Data redundancy">Data redundancy</a></li>

<li><a href="Replication_(computing)" title="Replication (computing)">Replication (computing)</a></li>

<li><a href="Memory_refresh" title="Memory refresh">Memory refresh</a></li>

<li><a href="Storage_record" title="Storage record">Storage record</a></li>

<li><a href="Information_repository" title="Information repository">Information repository</a></li>

<li><a href="Knowledge_base" title="Knowledge base">Knowledge base</a></li>

<li><a href="Computer_file" title="Computer file">Computer file</a></li>

<li><a href="Object_file" title="Object file">Object file</a></li>

<li><a href="File_deletion" title="File deletion">File deletion</a></li>

<li><a href="File_copying" title="File copying">File copying</a></li>

<li><a href="Backup" title="Backup">Backup</a></li>

<li><a href="Data_communication" title="Data communication">Data communication</a></li>

<li><a href="Information_transfer" title="Information transfer">Information transfer</a></li>

<li><a href="Temporary_file" title="Temporary file">Temporary file</a></li>

<li><a href="Copy_protection" title="Copy protection">Copy protection</a></li>

<li><a href="Digital_rights_management" title="Digital rights management">Digital rights management</a></li>

<li><a href="Volume_(computing)" title="Volume (computing)">Volume (computing)</a></li>

<li><a href="Boot_sector" title="Boot sector">Boot sector</a></li>

<li><a href="Master_boot_record" title="Master boot record">Master boot record</a></li>

<li><a href="Volume_boot_record" title="Volume boot record">Volume boot record</a></li>

<li><a href="GUID_Partition_Table" title="GUID Partition Table">GUID Partition Table</a></li>

<li><a href="Disk_array" title="Disk array">Disk array</a></li>

<li><a href="Disk_image" title="Disk image">Disk image</a></li>

<li><a href="Disk_mirroring" title="Disk mirroring">Disk mirroring</a></li>

<li><a href="Disk_aggregation" title="Disk aggregation">Disk aggregation</a></li>

<li><a href="Disk_partitioning" title="Disk partitioning">Disk partitioning</a></li>

<li><a href="Memory_segmentation" title="Memory segmentation">Memory segmentation</a></li>

<li><a href="Locality_of_reference" title="Locality of reference">Locality of reference</a></li>

<li><a href="Logical_disk" title="Logical disk">Logical disk</a></li>

<li><a href="Storage_virtualization" title="Storage virtualization">Storage virtualization</a></li>

<li><a href="Virtual_memory" title="Virtual memory">Virtual memory</a></li>

<li><a href="Memory-mapped_file" title="Memory-mapped file">Memory-mapped file</a></li>

<li><a href="Software_entropy" class="mw-redirect" title="Software entropy">Software entropy</a></li>

<li><a href="Software_rot" title="Software rot">Software rot</a></li>

<li><a href="In-memory_database" title="In-memory database">In-memory database</a></li>

<li><a href="In-memory_processing" title="In-memory processing">In-memory processing</a></li>

<li><a href="Persistence_(computer_science)" title="Persistence (computer science)">Persistence (computer science)</a></li>

<li><a href="Persistent_data_structure" title="Persistent data structure">Persistent data structure</a></li>

<li><a href="Non-RAID_drive_architectures" title="Non-RAID drive architectures">Non-RAID drive architectures</a></li>

<li><a href="Memory_paging" title="Memory paging">Memory paging</a></li>

<li><a href="Bank_switching" title="Bank switching">Bank switching</a></li>

<li><a href="Grid_computing" title="Grid computing">Grid computing</a></li>

<li><a href="Cloud_computing" title="Cloud computing">Cloud computing</a></li>

<li><a href="Cloud_storage" title="Cloud storage">Cloud storage</a></li>

<li><a href="Fog_computing" title="Fog computing">Fog computing</a></li>

<li><a href="Edge_computing" title="Edge computing">Edge computing</a></li>

<li><a href="Dew_computing" title="Dew computing">Dew computing</a></li>

<li><a href="Amdahl's_law" title="Amdahl's law">Amdahl's law</a></li>

<li><a href="Moore's_law" title="Moore's law">Moore's law</a></li>

<li><a href="Mark_Kryder#Kryder's_law_projection" title="Mark Kryder">Kryder's law</a></li></ul></div></div></td>

</tr><tr><th class="sidebar-heading">

<a href="Volatile_memory" title="Volatile memory">Volatile</a></th></tr><tr><td class="sidebar-content">

<ul><li><a href="Cache_(computing)#HARDWARE" title="Cache (computing)">Hardware cache</a>

<ul><li><a href="CPU_cache" title="CPU cache">CPU cache</a></li>

<li><a href="Scratchpad_memory" title="Scratchpad memory">Scratchpad memory</a></li></ul></li>

<ul><li><a href="EDRAM" title="EDRAM">eDRAM</a></li>

<li><a href="Synchronous_dynamic_random-access_memory" title="Synchronous dynamic random-access memory">SDRAM</a></li>

<li><a href="Synchronous_dynamic_random-access_memory#Synchronous_Graphics_RAM_(SGRAM)" title="Synchronous dynamic random-access memory">SGRAM</a></li>

<li><a href="LPDDR" title="LPDDR">LPDDR</a></li>

<li><a href="Quad_Data_Rate_SRAM" title="Quad Data Rate SRAM">QDRSRAM</a></li>

<li><a href="RDRAM" title="RDRAM">RDRAM</a></li>

<li><a href="Resistive_random-access_memory" title="Resistive random-access memory">ReRAM</a></li>

<li><a href="Content-addressable_memory" title="Content-addressable memory">Content-addressable memory</a> (CAM)</li>

<li><a href="Computational_RAM" title="Computational RAM">Computational RAM</a></li>

<li><a href="Dual-ported_RAM" title="Dual-ported RAM">Dual-ported RAM</a>

<ul><li><a href="Video_RAM_(dual-ported_DRAM)" class="mw-redirect" title="Video RAM (dual-ported DRAM)">Video RAM (dual-ported DRAM)</a></li></ul></li></ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Historical</div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Williams_tube" title="Williams tube">Williams–Kilburn tube</a> (1946–1947)</li>

<li><a href="Delay-line_memory" title="Delay-line memory">Delay-line memory</a> (1947)</li>

<li><a href="Mellon_optical_memory" title="Mellon optical memory">Mellon optical memory</a> (1951)</li>

<li><a href="Selectron_tube" title="Selectron tube">Selectron tube</a> (1952)</li>

<li><a href="Dekatron" title="Dekatron">Dekatron</a></li>

</tr><tr><th class="sidebar-heading">

<a href="Non-volatile_memory" title="Non-volatile memory">Non-volatile</a></th></tr><tr><td class="sidebar-content">

<ul><li><a href="Diode_matrix" title="Diode matrix">Diode matrix</a></li>

<ul><li><a href="EPROM" title="EPROM">EPROM</a></li>

<li><a href="EEPROM" title="EEPROM">EEPROM</a></li></ul></li>

<li><a href="ROM_cartridge" title="ROM cartridge">ROM cartridge</a></li>

<li><a href="Solid-state_storage" title="Solid-state storage">Solid-state storage</a> (SSS)

<ul><li><a href="Flash_memory" title="Flash memory">Flash memory</a> is used in:</li>

<li><a href="Solid-state_drive" title="Solid-state drive">Solid-state drive</a> (SSD)</li>

<li><a href="Solid-state_hybrid_drive" class="mw-redirect" title="Solid-state hybrid drive">Solid-state hybrid drive</a> (SSHD)</li>

<li><a href="USB_flash_drive" title="USB flash drive">USB flash drive</a></li>

<li><a href="IBM_FlashSystem" title="IBM FlashSystem">IBM FlashSystem</a></li>

<li><a href="Flash_Core_Module" title="Flash Core Module">Flash Core Module</a></li></ul></li>

<li><a href="Memory_card" title="Memory card">Memory card</a>

<ul><li><a href="Memory_Stick" title="Memory Stick">Memory Stick</a></li>

<li><a href="CompactFlash" title="CompactFlash">CompactFlash</a></li>

<li><a href="MultiMediaCard" title="MultiMediaCard">MultiMediaCard</a></li>

<li><a href="SmartMedia" title="SmartMedia">SmartMedia</a></li>

<li><a href="Universal_Flash_Storage" title="Universal Flash Storage">Universal Flash Storage</a></li>

<li><a href="MicroP2" title="MicroP2">MicroP2</a></li>

</ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="Non-volatile_random-access_memory" title="Non-volatile random-access memory">NVRAM</a></div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Memistor" title="Memistor">Memistor</a></li>

<li><a href="Memristor" title="Memristor">Memristor</a></li>

<li><a href="Phase-change_memory" title="Phase-change memory">PCM</a> (<a href="3D_XPoint" title="3D XPoint">3D XPoint</a>)</li>

<li><a href="Electrochemical_RAM" title="Electrochemical RAM">Electrochemical RAM</a> (ECRAM)</li>

</ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Early-stage <a href="Non-volatile_random-access_memory" title="Non-volatile random-access memory">NVRAM</a></div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Ferroelectric_RAM" title="Ferroelectric RAM">FeRAM</a></li>

<li><a href="Resistive_random-access_memory" title="Resistive random-access memory">ReRAM</a></li>

<li><a href="Fe_FET" title="Fe FET">FeFET memory</a></li></ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="Analog_recording" title="Analog recording">Analog recording</a></div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Phonograph_cylinder" title="Phonograph cylinder">Phonograph cylinder</a></li>

<li><a href="Phonograph_record" title="Phonograph record">Phonograph record</a></li>

<li><a href="Quadruplex_videotape" title="Quadruplex videotape">Quadruplex videotape</a></li>

<li><a href="Vision_Electronic_Recording_Apparatus" title="Vision Electronic Recording Apparatus">Vision Electronic Recording Apparatus</a></li>

<li><a href="Magnetic_recording" class="mw-redirect" title="Magnetic recording">Magnetic recording</a>

<ul><li><a href="Magnetic_storage" title="Magnetic storage">Magnetic storage</a></li>

<li><a href="Magnetic_tape" title="Magnetic tape">Magnetic tape</a></li>

<li><a href="Magnetic-tape_data_storage" title="Magnetic-tape data storage">Magnetic-tape data storage</a></li>

<li><a href="Tape_drive" title="Tape drive">Tape drive</a></li>

<li><a href="Tape_library" title="Tape library">Tape library</a></li>

<li><a href="Digital_Data_Storage" title="Digital Data Storage">Digital Data Storage</a> (DDS)</li>

<li><a href="Videotape" title="Videotape">Videotape</a></li>

<li><a href="Cassette_tape" title="Cassette tape">Cassette tape</a></li>

<li><a href="Linear_Tape-Open" title="Linear Tape-Open">Linear Tape-Open</a></li>

<li><a href="Betamax" title="Betamax">Betamax</a></li>

<li><a href="8_mm_video_format" title="8 mm video format">8 mm video format</a></li>

<li><a href="MiniDV" class="mw-redirect" title="MiniDV">MiniDV</a></li>

<li><a href="MicroMV" title="MicroMV">MicroMV</a></li>

<li><a href="U-matic" title="U-matic">U-matic</a></li>

<li><a href="Hard_disk_drive" title="Hard disk drive">Hard disk drive</a></li></ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="Optical_storage" title="Optical storage">Optical</a></div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="3D_optical_data_storage" title="3D optical data storage">3D optical data storage</a>

<ul><li><a href="Optical_disc" title="Optical disc">Optical disc</a></li>

<li><a href="LaserDisc" title="LaserDisc">LaserDisc</a></li>

<li><a href="Compact_Disc_Digital_Audio" title="Compact Disc Digital Audio">Compact Disc Digital Audio</a> (CDDA)</li>

<li><a href="CD_Video" title="CD Video">CD Video</a></li>

<li><a href="Video_CD" title="Video CD">Video CD</a></li>

<li><a href="Super_Video_CD" title="Super Video CD">Super Video CD</a></li>

<li><a href="Nintendo_optical_discs" title="Nintendo optical discs">Nintendo optical discs</a></li>

<li><a href="Hyper_CD-ROM" title="Hyper CD-ROM">Hyper CD-ROM</a></li>

<li><a href="DVD-Video" title="DVD-Video">DVD-Video</a></li>

<li><a href="MiniDVD" title="MiniDVD">MiniDVD</a></li>

<li><a href="Ultra_HD_Blu-ray" title="Ultra HD Blu-ray">Ultra HD Blu-ray</a></li>

<li><a href="Holographic_Versatile_Disc" title="Holographic Versatile Disc">Holographic Versatile Disc</a></li></ul></li>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">In development</div><div class="sidebar-list-content mw-collapsible-content">

<ul>

<li><a href="Racetrack_memory" title="Racetrack memory">Racetrack memory</a></li>

<li><a href="Millipede_memory" title="Millipede memory">Millipede memory</a></li>

<li><a href="Electrochemical_RAM" title="Electrochemical RAM">ECRAM</a></li>

<li><a href="Patterned_media" title="Patterned media">Patterned media</a></li>

<li><a href="Holographic_data_storage" title="Holographic data storage">Holographic data storage</a>

<ul><li><a href="Electronic_quantum_holography" title="Electronic quantum holography">Electronic quantum holography</a></li></ul></li>

<li><a href="5D_optical_data_storage" title="5D optical data storage">5D optical data storage</a></li>

<li><a href="DNA_digital_data_storage" title="DNA digital data storage">DNA digital data storage</a></li>

<li><a href="Universal_memory" title="Universal memory">Universal memory</a></li>

<li><a href="Time_crystal" title="Time crystal">Time crystal</a></li>

<li><a href="Quantum_memory" title="Quantum memory">Quantum memory</a></li>

<li><a href="UltraRAM" title="UltraRAM">UltraRAM</a></li></ul></div></div></td>

</tr><tr><td class="sidebar-content">

<div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Historical</div><div class="sidebar-list-content mw-collapsible-content">

<ul><li><a href="Paper_data_storage" title="Paper data storage">Paper data storage</a> (1725)</li>

<li><a href="Punched_card" title="Punched card">Punched card</a> (1725)</li>

<li><a href="Punched_tape" title="Punched tape">Punched tape</a> (1725)</li>

<li><a href="Plugboard" title="Plugboard">Plugboard</a></li>

<li><a href="Drum_memory" title="Drum memory">Drum memory</a> (1932)</li>

<li><a href="Magnetic-core_memory" title="Magnetic-core memory">Magnetic-core memory</a> (1949)</li>

<li><a href="Plated-wire_memory" title="Plated-wire memory">Plated-wire memory</a> (1957)</li>

<li><a href="Core_rope_memory" title="Core rope memory">Core rope memory</a> (1960s)</li>

<li><a href="Thin-film_memory" title="Thin-film memory">Thin-film memory</a> (1962)</li>

<li><a href="Twistor_memory" title="Twistor memory">Twistor memory</a> (~1968)</li>

<li><a href="Bubble_memory" title="Bubble memory">Bubble memory</a> (~1970)</li>

<li><a href="Floppy_disk" title="Floppy disk">Floppy disk</a> (1971)</li></ul></div></div></td>

</tr><tr><td class="sidebar-navbar"><style data-mw-deduplicate="TemplateStyles:r1239400231">

/* start https://en.wikipedia.org/ */

.mw-parser-output .navbar{display:inline;font-size:88%;font-weight:normal}.mw-parser-output .navbar-collapse{float:left;text-align:left}.mw-parser-output .navbar-boxtext{word-spacing:0}.mw-parser-output .navbar ul{display:inline-block;white-space:nowrap;line-height:inherit}.mw-parser-output .navbar-brackets::before{margin-right:-0.125em;content:"[ "}.mw-parser-output .navbar-brackets::after{margin-left:-0.125em;content:" ]"}.mw-parser-output .navbar li{word-spacing:-0.125em}.mw-parser-output .navbar a>span,.mw-parser-output .navbar a>abbr{text-decoration:inherit}.mw-parser-output .navbar-mini abbr{font-variant:small-caps;border-bottom:none;text-decoration:none;cursor:inherit}.mw-parser-output .navbar-ct-full{font-size:114%;margin:0 7em}.mw-parser-output .navbar-ct-mini{font-size:114%;margin:0 4em}html.skin-theme-clientpref-night .mw-parser-output .navbar li a abbr{color:var(--color-base)!important}@media(prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .navbar li a abbr{color:var(--color-base)!important}}@media print{.mw-parser-output .navbar{display:none!important}}

/* end https://en.wikipedia.org/ */

</style></td></tr></tbody></table>

<p>The <b>programmable metallization cell</b>, or <b>PMC</b>, is a <a href="Non-volatile_memory" title="Non-volatile memory">non-volatile</a> <a href="Computer_memory" title="Computer memory">computer memory</a> developed at <a href="Arizona_State_University" title="Arizona State University">Arizona State University</a>. PMC, a technology developed to replace the widely used <a href="Flash_memory" title="Flash memory">flash memory</a>, providing a combination of longer lifetimes, lower power, and better memory density. <a href="Infineon_Technologies" title="Infineon Technologies">Infineon Technologies</a>, who licensed the technology in 2004, refers to it as <b>conductive-bridging <a href="RAM" class="mw-redirect" title="RAM">RAM</a></b>, or <b>CBRAM</b>. CBRAM became a registered trademark of <a href="Adesto_Technologies" title="Adesto Technologies">Adesto Technologies</a> in 2011.<sup id="cite_ref-1" class="reference"><a href="#cite_note-1"><span class="cite-bracket">[</span>1<span class="cite-bracket">]</span></a></sup> <a href="NEC" title="NEC">NEC</a> has a variant called "Nanobridge" and <a href="Sony" title="Sony">Sony</a> calls their version "electrolytic memory".

</p>

<div class="mw-heading mw-heading2"><h2 id="Description">Description</h2></div>

<p>PMC is a two terminal <a href="RRAM" class="mw-redirect" title="RRAM">resistive memory</a> technology developed at <a href="Arizona_State_University" title="Arizona State University">Arizona State University</a>. PMC is an electrochemical metallization memory that relies on <a href="Redox" title="Redox">redox</a> reactions to form and dissolve a conductive filament.<sup id="cite_ref-valov2011_2-0" class="reference"><a href="#cite_note-valov2011-2"><span class="cite-bracket">[</span>2<span class="cite-bracket">]</span></a></sup> The state of the device is determined by the resistance across the two terminals. The existence of a filament between the terminals produces a low resistance state (LRS) while the absence of a filament results in a high resistance state (HRS). A PMC device is made of two solid metal electrodes, one relatively inert (e.g., <a href="Tungsten" title="Tungsten">tungsten</a> or <a href="Nickel" title="Nickel">nickel</a>) the other electrochemically active (e.g., <a href="Silver" title="Silver">silver</a> or <a href="Copper" title="Copper">copper</a>), with a <a href="Thin_film" title="Thin film">thin film</a> of <a href="Solid_electrolyte" class="mw-redirect" title="Solid electrolyte">solid electrolyte</a> between them.<sup id="cite_ref-3" class="reference"><a href="#cite_note-3"><span class="cite-bracket">[</span>3<span class="cite-bracket">]</span></a></sup>

</p>

<div class="mw-heading mw-heading2"><h2 id="Device_operation">Device operation</h2></div>

<p>The resistance state of a PMC is controlled by the formation (programming) or dissolution (erasing) of a metallic conductive filament between the two terminals of the cell. A formed filament is a <a href="Diffusion-limited_aggregation" title="Diffusion-limited aggregation">fractal tree</a> like structure.

</p>

<div class="mw-heading mw-heading3"><h3 id="Filament_formation">Filament formation</h3></div>

<p>PMC rely on the formation of a metallic conductive filament to transition to a low resistance state (LRS). The filament is created by applying a positive <a href="Voltage" title="Voltage">voltage</a> bias (<i>V</i>) to the <a href="Anode" title="Anode">anode</a> contact (active metal) while <a href="Ground_(electricity)" title="Ground (electricity)">grounding</a> the <a href="Cathode" title="Cathode">cathode</a> contact (inert metal). The positive bias <a href="Redox" title="Redox">oxidizes</a> the active metal (M):

</p>

<p>The applied bias generates an <a href="Electric_field" title="Electric field">electric field</a> between the two metal contacts. The ionized (oxidized) metal ions migrate along the electric field toward the cathode contact. At the cathode contact, the metal ions are <a href="Redox" title="Redox">reduced</a>:

</p>

<p>As the active metal deposits on the cathode, the electric field increases between the anode and the deposit. The evolution of the local electric field (<i>E</i>) between the growing filament and the anode can be simplistically related to the following:

</p>

<mfrac>

</mfrac>

</mrow>

</mstyle>

</mrow>

<annotation encoding="application/x-tex">{\displaystyle E=-{\frac {V}{d}}}</annotation>

</semantics>

</math></span><img src="./a5ea80b4a103bbdc88a44187b98a9eaf92cee3dd.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -2.005ex; width:9.306ex; height:5.343ex;" alt="{\displaystyle E=-{\frac {V}{d}}}" loading="lazy"></span></dd></dl>

<p>where <i>d</i> is the distance between the anode and the top of the growing filament. The filament will grow to connect to the anode within a few nanoseconds.<sup id="cite_ref-IEEE_4-0" class="reference"><a href="#cite_note-IEEE-4"><span class="cite-bracket">[</span>4<span class="cite-bracket">]</span></a></sup> Metal ions will continue to be reduced at the filament until the voltage is removed, broadening the conductive filament and decreasing the resistance of the connection over time. Once the voltage is removed, the conductive filament will remain, leaving the device in a LRS.

</p><p>The conductive filament may not be continuous, but a chain of electrodeposit islands or nanocrystals.<sup id="cite_ref-5" class="reference"><a href="#cite_note-5"><span class="cite-bracket">[</span>5<span class="cite-bracket">]</span></a></sup> This is likely to prevail at low programming currents (less than 1 <a href="Micro-" title="Micro-">μ</a><a href="Ampere" title="Ampere">A</a>) whereas higher programming current will lead to a mostly metallic conductor.

</p>

<div class="mw-heading mw-heading3"><h3 id="Filament_dissolution">Filament dissolution</h3></div>

<p>A PMC can be "erased" into a high resistance state (HRS) by applying a negative voltage bias to the anode. The redox process used to create the conductive filament is reversed and the metal ions migrate along the reversed electric field to reduce at the anode contact. With the filament removed, the PMC is analogous to parallel plate <a href="Capacitor" title="Capacitor">capacitor</a> with a high resistance of several <a href="Mega-" title="Mega-">M</a><a href="Ohm" title="Ohm">Ω</a> to <a href="Giga-" title="Giga-">G</a><a href="Ohm" title="Ohm">Ω</a> between the contacts.

</p>

<div class="mw-heading mw-heading3"><h3 id="Device_read">Device read</h3></div>

<p>An individual PMC can be read by applying a small voltage across the cell. As long as the applied read voltage is less than both the programming and erasing voltage threshold, the direction of the bias is not significant.

</p>

<div class="mw-heading mw-heading2"><h2 id="Technology_comparison">Technology comparison</h2></div>

<div class="mw-heading mw-heading3"><h3 id="CBRAM_vs._metal-oxide_ReRAM">CBRAM vs. metal-oxide ReRAM</h3></div>

<p>CBRAM differs from metal-oxide ReRAM in that for CBRAM metal ions dissolve readily in the material between the two electrodes, while for metal-oxides, the material between the electrodes requires a high electric field causing local damage akin to <a href="Dielectric_breakdown" class="mw-redirect" title="Dielectric breakdown">dielectric breakdown</a>, producing a trail of conducting defects (sometimes called a "filament"). Hence for CBRAM, one electrode must provide the dissolving ions, while for metal-oxide RRAM, a one-time "forming" step is required to generate the local damage.

</p>

<div class="mw-heading mw-heading3"><h3 id="CBRAM_vs._NAND_Flash">CBRAM vs. NAND Flash</h3></div>

<p>The primary form of <a href="Solid_state_(electronics)" class="mw-redirect" title="Solid state (electronics)">solid-state</a> non-volatile memory in use is <a href="Flash_memory" title="Flash memory">flash memory</a>, which is finding use in most roles formerly filled by <a href="Hard_drive" class="mw-redirect" title="Hard drive">hard drives</a>. Flash, however, has problems that led to many efforts to introduce products to replace it.

</p><p>Flash is based on the <a href="Floating_gate" class="mw-redirect" title="Floating gate">floating gate</a> concept, essentially a modified transistor. Conventional flash transistors have three connections, the source, drain and gate. The gate is the essential component of the transistor, controlling the resistance between the source and drain, and thereby acting as a switch. In the <a href="Floating_Gate_Transistor" class="mw-redirect" title="Floating Gate Transistor">floating gate transistor</a>, the gate is attached to a layer that traps electrons, leaving it switched on (or off) for extended periods of time. The floating gate can be re-written by passing a large current through the emitter-collector circuit.

</p><p>It is this large current that is flash's primary drawback, and for a number of reasons. For one, each application of the current physically degrades the cell, such that the cell will eventually be unwritable. Write cycles on the order of 10<sup>5</sup> to 10<sup>6</sup> are typical, limiting flash applications to roles where constant writing is not common. The current also requires an external circuit to generate, using a system known as a <a href="Charge_pump" title="Charge pump">charge pump</a>. The pump requires a fairly lengthy charging process so that writing is much slower than reading; the pump also requires much more power. Flash is thus an "asymmetrical" system, much more so than conventional <a href="Random_access_memory" class="mw-redirect" title="Random access memory">RAM</a> or hard drives.

</p><p>Another problem with flash is that the floating gate suffers leakage that slowly releases the charge. This is countered through the use of powerful surrounding insulators, but these require a certain physical size in order to be useful and also require a specific <a href="Integrated_circuit_layout" title="Integrated circuit layout">physical layout</a>, which is different from the more typical <a href="CMOS" title="CMOS">CMOS</a> layouts, which required several new fabrication techniques to be introduced. As flash scales rapidly downward in size the charge leakage increasingly becomes a problem, which led to predictions of its demise. However, massive market investment drove development of flash at rates in excess of <a href="Moore's_Law" class="mw-redirect" title="Moore's Law">Moore's Law</a>, and <a href="Semiconductor_fabrication_plant" title="Semiconductor fabrication plant">semiconductor fabrication plants</a> using 30 nm processes were brought online in late 2007.

</p><p>In contrast to flash, PMC writes with relatively low power and at high speed. The speed is inversely related to the power applied (to a point, there are mechanical limits), so the performance can be tuned.<sup id="cite_ref-wired_6-0" class="reference"><a href="#cite_note-wired-6"><span class="cite-bracket">[</span>6<span class="cite-bracket">]</span></a></sup>

</p><p>PMC, in theory, can scale to sizes much smaller than flash, theoretically as small as a few ion widths wide. Copper ions are about 0.75 angstroms,<sup id="cite_ref-7" class="reference"><a href="#cite_note-7"><span class="cite-bracket">[</span>7<span class="cite-bracket">]</span></a></sup> so line widths on the order of nanometers seem possible. PMC was promoted as simpler in layout than flash.<sup id="cite_ref-wired_6-1" class="reference"><a href="#cite_note-wired-6"><span class="cite-bracket">[</span>6<span class="cite-bracket">]</span></a></sup>

</p>

<div class="mw-heading mw-heading2"><h2 id="History">History</h2></div>

<p>PMC technology was developed by Michael Kozicki, professor of electrical engineering at <a href="Arizona_State_University" title="Arizona State University">Arizona State University</a> in the 1990s.<sup id="cite_ref-8" class="reference"><a href="#cite_note-8"><span class="cite-bracket">[</span>8<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-9" class="reference"><a href="#cite_note-9"><span class="cite-bracket">[</span>9<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-10" class="reference"><a href="#cite_note-10"><span class="cite-bracket">[</span>10<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-11" class="reference"><a href="#cite_note-11"><span class="cite-bracket">[</span>11<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-12" class="reference"><a href="#cite_note-12"><span class="cite-bracket">[</span>12<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-13" class="reference"><a href="#cite_note-13"><span class="cite-bracket">[</span>13<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-14" class="reference"><a href="#cite_note-14"><span class="cite-bracket">[</span>14<span class="cite-bracket">]</span></a></sup>

Early experimental PMC systems were based on silver-doped <a href="Germanium_selenide" title="Germanium selenide">germanium selenide</a> glasses. Work turned to silver-doped germanium sulfide electrolytes and then to the copper-doped germanium sulfide electrolytes.<sup id="cite_ref-IEEE_4-1" class="reference"><a href="#cite_note-IEEE-4"><span class="cite-bracket">[</span>4<span class="cite-bracket">]</span></a></sup> There has been renewed interest in silver-doped germanium selenide devices due to their high, high resistance state. Copper-doped silicon dioxide glass PMC would be compatible with the CMOS <a href="Semiconductor_device_fabrication" title="Semiconductor device fabrication">fabrication</a> process.

</p><p>In 1996, Axon Technologies was founded to commercialize the PMC technology.

<a href="Micron_Technology" title="Micron Technology">Micron Technology</a> announced work with PMC in 2002.<sup id="cite_ref-micron_15-0" class="reference"><a href="#cite_note-micron-15"><span class="cite-bracket">[</span>15<span class="cite-bracket">]</span></a></sup> <a href="Infineon" class="mw-redirect" title="Infineon">Infineon</a> followed in 2004.<sup id="cite_ref-infineon_16-0" class="reference"><a href="#cite_note-infineon-16"><span class="cite-bracket">[</span>16<span class="cite-bracket">]</span></a></sup> PMC technology was licensed to Adesto Technologies by 2007.<sup id="cite_ref-wired_6-2" class="reference"><a href="#cite_note-wired-6"><span class="cite-bracket">[</span>6<span class="cite-bracket">]</span></a></sup>

infineon had spun off memory business to its <a href="Qimonda" title="Qimonda">Qimonda</a> company, which in turn sold it to Adesto Technologies. A <a href="DARPA" title="DARPA">DARPA</a> grant was awarded in 2010 for further research.<sup id="cite_ref-17" class="reference"><a href="#cite_note-17"><span class="cite-bracket">[</span>17<span class="cite-bracket">]</span></a></sup>

</p><p>In 2011, Adesto Technologies allied with the French company <a href="Altis_Semiconductor" class="mw-redirect" title="Altis Semiconductor">Altis Semiconductor</a> for development and manufacturing of CBRAM.<sup id="cite_ref-18" class="reference"><a href="#cite_note-18"><span class="cite-bracket">[</span>18<span class="cite-bracket">]</span></a></sup> In 2013, Adesto introduced a sample CBRAM product in which a 1 megabit part was promoted to replace <a href="EEPROM" title="EEPROM">EEPROM</a>.<sup id="cite_ref-19" class="reference"><a href="#cite_note-19"><span class="cite-bracket">[</span>19<span class="cite-bracket">]</span></a></sup>

</p><p>NEC developed the so-called nanobridge technology, using Cu<sub>2</sub>S or tantalumpentoxide as dielectric material. Hereby copper (compatible with copper metallization of the IC) makes the copper to migrate through Cu<sub>2</sub>S or Ta<sub>2</sub>O<sub>5</sub> making or breaking shorts between the copper and ruthenium electrodes.<sup id="cite_ref-SakamotoBanno2007_20-0" class="reference"><a href="#cite_note-SakamotoBanno2007-20"><span class="cite-bracket">[</span>20<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-21" class="reference"><a href="#cite_note-21"><span class="cite-bracket">[</span>21<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-22" class="reference"><a href="#cite_note-22"><span class="cite-bracket">[</span>22<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-23" class="reference"><a href="#cite_note-23"><span class="cite-bracket">[</span>23<span class="cite-bracket">]</span></a></sup>

</p><p>The dominant use of this type of memory are space applications, since this type of memory is intrinsically radiation hard.

</p>

<ul><li><a href="Static_random-access_memory" title="Static random-access memory">Static random-access memory</a></li></ul>

<div class="mw-heading mw-heading2"><h2 id="References">References</h2></div>

/* start https://en.wikipedia.org/ */

.mw-parser-output .reflist{margin-bottom:0.5em;list-style-type:decimal}@media screen{.mw-parser-output .reflist{font-size:90%}}.mw-parser-output .reflist .references{font-size:100%;margin-bottom:0;list-style-type:inherit}.mw-parser-output .reflist-columns-2{column-width:30em}.mw-parser-output .reflist-columns-3{column-width:25em}.mw-parser-output .reflist-columns{margin-top:0.3em}.mw-parser-output .reflist-columns ol{margin-top:0}.mw-parser-output .reflist-columns li{page-break-inside:avoid;break-inside:avoid-column}.mw-parser-output .reflist-upper-alpha{list-style-type:upper-alpha}.mw-parser-output .reflist-upper-roman{list-style-type:upper-roman}.mw-parser-output .reflist-lower-alpha{list-style-type:lower-alpha}.mw-parser-output .reflist-lower-greek{list-style-type:lower-greek}.mw-parser-output .reflist-lower-roman{list-style-type:lower-roman}

/* end https://en.wikipedia.org/ */

</style><div class="reflist">

/* start https://en.wikipedia.org/ */

.mw-parser-output cite.citation{font-style:inherit;word-wrap:break-word}.mw-parser-output .citation q{quotes:"\"""\"""'""'"}.mw-parser-output .citation:target{background-color:rgba(0,127,255,0.133)}.mw-parser-output .id-lock-free.id-lock-free a{background:url("./mw/Lock-green.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-limited.id-lock-limited a,.mw-parser-output .id-lock-registration.id-lock-registration a{background:url("./mw/Lock-gray-alt-2.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-subscription.id-lock-subscription a{background:url("./mw/Lock-red-alt-2.svg")right 0.1em center/9px no-repeat}.mw-parser-output .cs1-ws-icon a{background:url("./mw/Wikisource-logo.svg")right 0.1em center/12px no-repeat}body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-free a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-limited a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-registration a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-subscription a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .cs1-ws-icon a{background-size:contain;padding:0 1em 0 0}.mw-parser-output .cs1-code{color:inherit;background:inherit;border:none;padding:inherit}.mw-parser-output .cs1-hidden-error{display:none;color:var(--color-error,#d33)}.mw-parser-output .cs1-visible-error{color:var(--color-error,#d33)}.mw-parser-output .cs1-maint{display:none;color:#085;margin-left:0.3em}.mw-parser-output .cs1-kern-left{padding-left:0.2em}.mw-parser-output .cs1-kern-right{padding-right:0.2em}.mw-parser-output .citation .mw-selflink{font-weight:inherit}@media screen{.mw-parser-output .cs1-format{font-size:95%}html.skin-theme-clientpref-night .mw-parser-output .cs1-maint{color:#18911f}}@media screen and (prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .cs1-maint{color:#18911f}}

/* end https://en.wikipedia.org/ */

</style><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://web.archive.org/web/20191118085652/http://www.adestotech.com/trademarks-legal-terms/">"Adesto Technologies Trademarks"</a>. Archived from <a rel="nofollow" class="external text" href="http://www.adestotech.com/trademarks-legal-terms/">the original</a> on 2019-11-18<span class="reference-accessdate">. Retrieved <span class="nowrap">2015-07-30</span></span>.</cite></span>

</li>

<li id="cite_note-valov2011-2"><span class="mw-cite-backlink"><b><a href="#cite_ref-valov2011_2-0">^</a></b></span> <span class="reference-text"><cite id="CITEREFValovWaserJamesonKozicki2011" class="citation journal cs1">Valov, Ilia; Waser, Rainer; Jameson, John; Kozicki, Michael (June 2011). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US10833264B2/en">"Electrochemical metallization memories-fundamentals, applications, prospects"</a>. <i>Nanotechnology</i>. <b>22</b> (25): 254003. <a href="Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/2011Nanot..22y4003V">2011Nanot..22y4003V</a>. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1088%2F0957-4484%2F22%2F25%2F254003">10.1088/0957-4484/22/25/254003</a>. <a href="PMID_(identifier)" class="mw-redirect" title="PMID (identifier)">PMID</a> <a rel="nofollow" class="external text" href="https://pubmed.ncbi.nlm.nih.gov/21572191">21572191</a>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:250920840">250920840</a>.</cite></span>

</li>

<li id="cite_note-3"><span class="mw-cite-backlink"><b><a href="#cite_ref-3">^</a></b></span> <span class="reference-text"><cite id="CITEREFMichael_N._KozickiChakravarthy_GopalanMurali_BalakrishnanMira_Park2004" class="citation book cs1">Michael N. Kozicki; Chakravarthy Gopalan; Murali Balakrishnan; Mira Park; Maria Mitkova (August 20, 2004). <a rel="nofollow" class="external text" href="https://web.archive.org/web/20160711195216/http://axontc.com/images/Nov04NVMTSpaper.pdf">"Nonvolatile memory based on solid electrolytes"</a> <span class="cs1-format">(PDF)</span>. <i>Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference</i>. IEEE. pp. <span class="nowrap">10–</span>17. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FNVMT.2004.1380792">10.1109/NVMT.2004.1380792</a>. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>0-7803-8726-0</bdi>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:2884270">2884270</a>. Archived from <a rel="nofollow" class="external text" href="http://www.axontc.com/images/Nov04NVMTSpaper.pdf">the original</a> <span class="cs1-format">(PDF)</span> on July 11, 2016<span class="reference-accessdate">. Retrieved <span class="nowrap">April 13,</span> 2017</span>.</cite></span>

</li>

<li id="cite_note-IEEE-4"><span class="mw-cite-backlink">^ <a href="#cite_ref-IEEE_4-0"><sup><i><b>a</b></i></sup></a> <a href="#cite_ref-IEEE_4-1"><sup><i><b>b</b></i></sup></a></span> <span class="reference-text"><cite id="CITEREFM.N._KozickiM._BalakrishnanC._GopalanC._Ratnakumar2005" class="citation book cs1">M.N. Kozicki; M. Balakrishnan; C. Gopalan; C. Ratnakumar; M. Mitkova (November 2005). "Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes". <i>Symposium Non-Volatile Memory Technology 2005</i>. IEEE. pp. <span class="nowrap">83–</span>89. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FNVMT.2005.1541405">10.1109/NVMT.2005.1541405</a>. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>0-7803-9408-9</bdi>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:45696302">45696302</a>.</cite></span>

</li>

<li id="cite_note-5"><span class="mw-cite-backlink"><b><a href="#cite_ref-5">^</a></b></span> <span class="reference-text"><cite id="CITEREFMuralikrishnan_BalakrishnanSarath_Chandran_Puthen_ThermadamMaria_MitkovaMichael_N._Kozicki2006" class="citation book cs1">Muralikrishnan Balakrishnan; Sarath Chandran Puthen Thermadam; Maria Mitkova; Michael N. Kozicki (November 2006). "A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide". <i>2006 7th Annual Non-Volatile Memory Technology Symposium</i>. IEEE. pp. <span class="nowrap">111–</span>115. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FNVMT.2006.378887">10.1109/NVMT.2006.378887</a>. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>0-7803-9738-X</bdi>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:27573769">27573769</a>.</cite></span>

</li>

<li id="cite_note-wired-6"><span class="mw-cite-backlink">^ <a href="#cite_ref-wired_6-0"><sup><i><b>a</b></i></sup></a> <a href="#cite_ref-wired_6-1"><sup><i><b>b</b></i></sup></a> <a href="#cite_ref-wired_6-2"><sup><i><b>c</b></i></sup></a></span> <span class="reference-text"><cite id="CITEREFMadrigal2007" class="citation magazine cs1">Madrigal, Alexis (October 26, 2007). <a rel="nofollow" class="external text" href="https://web.archive.org/web/20080511175927/http://www.wired.com/gadgets/miscellaneous/news/2007/10/ion_memory">"Terabyte Thumb Drives Made Possible by Nanotech Memory"</a>. <i><a href="Wired_(magazine)" title="Wired (magazine)">Wired</a></i>. Archived from <a rel="nofollow" class="external text" href="https://www.wired.com/gadgets/miscellaneous/news/2007/10/ion_memory">the original</a> on May 11, 2008<span class="reference-accessdate">. Retrieved <span class="nowrap">April 13,</span> 2017</span>.</cite></span>

</li>

<li id="cite_note-7"><span class="mw-cite-backlink"><b><a href="#cite_ref-7">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://web.archive.org/web/20071107171039/http://www.astro.lsa.umich.edu/~cowley/ionsize.html">"Ion Sizes of Common Elements"</a>. Archived from <a rel="nofollow" class="external text" href="http://www.astro.lsa.umich.edu/~cowley/ionsize.html">the original</a> on 2007-11-07.</cite>, compare with Co</span>

</li>

<li id="cite_note-8"><span class="mw-cite-backlink"><b><a href="#cite_ref-8">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US5761115/en">"Programmable metallization cell structure and method of making same"</a>.</cite></span>

</li>

<li id="cite_note-9"><span class="mw-cite-backlink"><b><a href="#cite_ref-9">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US6418049/en">"Programmable sub-surface aggregating metallization structure and method of making same"</a>.</cite></span>

</li>

<li id="cite_note-10"><span class="mw-cite-backlink"><b><a href="#cite_ref-10">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US6487106/en">"Programmable microelectronic devices and method of forming and programming same"</a>.</cite></span>

</li>

<li id="cite_note-11"><span class="mw-cite-backlink"><b><a href="#cite_ref-11">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US7132675/en">"Programmable conductor memory cell structure and method therefor"</a>.</cite></span>

</li>

<li id="cite_note-12"><span class="mw-cite-backlink"><b><a href="#cite_ref-12">^</a></b></span> <span class="reference-text"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US7372065">U.S. Patent 7,372,065</a></span>

</li>

<li id="cite_note-13"><span class="mw-cite-backlink"><b><a href="#cite_ref-13">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US7728322/en">"Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same"</a>.</cite></span>

</li>

<li id="cite_note-14"><span class="mw-cite-backlink"><b><a href="#cite_ref-14">^</a></b></span> <span class="reference-text"><cite id="CITEREFB._SwaroopW._C._WestG._MartinezMichael_N._Kozicki1998" class="citation book cs1">B. Swaroop; W. C. West; G. Martinez; Michael N. Kozicki; L.A. Akers (May 1998). "Programmable current mode Hebbian learning neural network using programmable metallization cell". <i>ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187)</i>. Vol. 3. IEEE. pp. <span class="nowrap">33–</span>36. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FISCAS.1998.703888">10.1109/ISCAS.1998.703888</a>. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>0-7803-4455-3</bdi>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:61167613">61167613</a>.</cite></span>

</li>

<li id="cite_note-micron-15"><span class="mw-cite-backlink"><b><a href="#cite_ref-micron_15-0">^</a></b></span> <span class="reference-text"><cite class="citation news cs1">"Micron Technology Licenses Axon's Programmable Metallization Cell Technology". <i>Press release</i>. January 18, 2002.</cite></span>

</li>

<li id="cite_note-infineon-16"><span class="mw-cite-backlink"><b><a href="#cite_ref-infineon_16-0">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.design-reuse.com/news/8739/axon-infineon-licensee-programmable-metallization-cell-nonvolatile-memory-technology.html">"Axon Technologies Corp. Announces Infineon as New Licensee of Programmable Metallization Cell Nonvolatile Memory Technology"</a>. <i>Design And Reuse</i>.</cite></span>

</li>

<li id="cite_note-17"><span class="mw-cite-backlink"><b><a href="#cite_ref-17">^</a></b></span> <span class="reference-text"><cite class="citation news cs1"><a rel="nofollow" class="external text" href="http://www.adestotech.com/news-detail/adesto-technologies-wins-darpa-award-to-develop-sub-threshold-non-volatile-embedded-cbram-memory/">"Adesto Technologies Wins DARPA Award to Develop Sub-Threshold Non-Volatile, Embedded CBRAM Memory"</a>. <i>Press release</i>. Adesto. November 29, 2010<span class="reference-accessdate">. Retrieved <span class="nowrap">April 13,</span> 2017</span>.</cite></span>

</li>

<li id="cite_note-18"><span class="mw-cite-backlink"><b><a href="#cite_ref-18">^</a></b></span> <span class="reference-text"><a rel="nofollow" class="external text" href="http://www.altissemiconductor.com/fr/index.php/la-societe/media-center/communiques-presse-menu/archive-press-menu/139-altis-and-adesto-cbram">Altis et Adesto Technologies annoncent un partenariat sur les technologies Mémoires CBRAM avancées – Business Wire – published 27 June 2011 - viewed 28 March 2014</a> <a rel="nofollow" class="external text" href="https://web.archive.org/web/20140331150830/http://www.altissemiconductor.com/fr/index.php/la-societe/media-center/communiques-presse-menu/archive-press-menu/139-altis-and-adesto-cbram">Archived</a> 31 March 2014 at the <a href="Wayback_Machine" title="Wayback Machine">Wayback Machine</a></span>

</li>

<li id="cite_note-19"><span class="mw-cite-backlink"><b><a href="#cite_ref-19">^</a></b></span> <span class="reference-text"><cite class="citation news cs1"><a rel="nofollow" class="external text" href="http://www.nanalyze.com/2013/07/adesto-cbram-targets-70-billion-dollar-market">"Adesto's CBRAM targets 70 billion dollar market"</a>. <i>Nanalyze</i>. July 30, 2013<span class="reference-accessdate">. Retrieved <span class="nowrap">April 13,</span> 2017</span>.</cite></span>

</li>

<li id="cite_note-SakamotoBanno2007-20"><span class="mw-cite-backlink"><b><a href="#cite_ref-SakamotoBanno2007_20-0">^</a></b></span> <span class="reference-text"><cite id="CITEREFSakamotoBannoIguchiKawaura2007" class="citation journal cs1">Sakamoto, Toshitsugu; Banno, Naoki; Iguchi, Noriyuki; Kawaura, Hisao; Sunamura, Hiroshi; Fujieda, Shinji; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu (2007). "A Ta<sub>2</sub>O<sub>5</sub> solid-electrolyte switch with improved reliability": <span class="nowrap">38–</span>39. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FVLSIT.2007.4339718">10.1109/VLSIT.2007.4339718</a>. <a href="S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:38195904">38195904</a>.</cite> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{cite journal}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">|journal=</code> (help)</span></span>

</li>

<li id="cite_note-21"><span class="mw-cite-backlink"><b><a href="#cite_ref-21">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.eetimes.com/nec-nanobridge-could-build-programmable-ics/#">"NEC: Nanobridge could build programmable ICs"</a>. 23 February 2004<span class="reference-accessdate">. Retrieved <span class="nowrap">2020-10-22</span></span>.</cite></span>

</li>

<li id="cite_note-22"><span class="mw-cite-backlink"><b><a href="#cite_ref-22">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.tia-nano.jp/data/doc/1515026501_doc_13_1.pdf">"Low-power FPGA based on NanoBridge®technology"</a> <span class="cs1-format">(PDF)</span><span class="reference-accessdate">. Retrieved <span class="nowrap">2020-10-22</span></span>.</cite></span>

</li>

<li id="cite_note-23"><span class="mw-cite-backlink"><b><a href="#cite_ref-23">^</a></b></span> <span class="reference-text"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US20130181180/en">"Semiconductor device"</a>.</cite></span>

</li>

</ol></div></div>

<div class="mw-heading mw-heading2"><h2 id="External_links">External links</h2></div>

<ul><li><a rel="nofollow" class="external text" href="https://web.archive.org/web/20071031031203/http://www.axontc.com/">Axon Technologies Corporation</a></li>

<li><a rel="nofollow" class="external text" href="http://kozicki.faculty.asu.edu/">Michael N. Kozicki</a></li>

<li><a rel="nofollow" class="external text" href="http://www.adestotech.com/">Adesto Technologies</a></li></ul>

/* start https://en.wikipedia.org/ */

.mw-parser-output .navbox{box-sizing:border-box;border:1px solid #a2a9b1;width:100%;clear:both;font-size:88%;text-align:center;padding:1px;margin:1em auto 0}.mw-parser-output .navbox .navbox{margin-top:0}.mw-parser-output .navbox+.navbox,.mw-parser-output .navbox+.navbox-styles+.navbox{margin-top:-1px}.mw-parser-output .navbox-inner,.mw-parser-output .navbox-subgroup{width:100%}.mw-parser-output .navbox-group,.mw-parser-output .navbox-title,.mw-parser-output .navbox-abovebelow{padding:0.25em 1em;line-height:1.5em;text-align:center}.mw-parser-output .navbox-group{white-space:nowrap;text-align:right}.mw-parser-output .navbox,.mw-parser-output .navbox-subgroup{background-color:#fdfdfd}.mw-parser-output .navbox-list{line-height:1.5em;border-color:#fdfdfd}.mw-parser-output .navbox-list-with-group{text-align:left;border-left-width:2px;border-left-style:solid}.mw-parser-output tr+tr>.navbox-abovebelow,.mw-parser-output tr+tr>.navbox-group,.mw-parser-output tr+tr>.navbox-image,.mw-parser-output tr+tr>.navbox-list{border-top:2px solid #fdfdfd}.mw-parser-output .navbox-title{background-color:#ccf}.mw-parser-output .navbox-abovebelow,.mw-parser-output .navbox-group,.mw-parser-output .navbox-subgroup .navbox-title{background-color:#ddf}.mw-parser-output .navbox-subgroup .navbox-group,.mw-parser-output .navbox-subgroup .navbox-abovebelow{background-color:#e6e6ff}.mw-parser-output .navbox-even{background-color:#f7f7f7}.mw-parser-output .navbox-odd{background-color:transparent}.mw-parser-output .navbox .hlist td dl,.mw-parser-output .navbox .hlist td ol,.mw-parser-output .navbox .hlist td ul,.mw-parser-output .navbox td.hlist dl,.mw-parser-output .navbox td.hlist ol,.mw-parser-output .navbox td.hlist ul{padding:0.125em 0}.mw-parser-output .navbox .navbar{display:block;font-size:100%}.mw-parser-output .navbox-title .navbar{float:left;text-align:left;margin-right:0.5em}body.skin--responsive .mw-parser-output .navbox-image img{max-width:none!important}@media print{body.ns-0 .mw-parser-output .navbox{display:none!important}}

/* end https://en.wikipedia.org/ */

</style></div><div role="navigation" class="navbox" aria-labelledby="Emerging_technologies167" style="padding:3px"><table class="nowraplinks hlist mw-collapsible autocollapse navbox-inner" style="border-spacing:0;background:transparent;color:inherit"><tbody><tr><th scope="col" class="navbox-title" colspan="2" style="text-align: center;"><div id="Emerging_technologies167" style="font-size:114%;margin:0 4em"><a href="Emerging_technologies" title="Emerging technologies">Emerging technologies</a></div></th></tr><tr><th scope="row" class="navbox-group" style="text-align: center;;width:1%">Fields</th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"></div><table class="nowraplinks navbox-subgroup" style="border-spacing:0"><tbody><tr><th scope="row" class="navbox-group" style="width:1%;text-align: center;"><div style="display: inline-block; line-height: 1.2em; padding: .1em 0;"><a href="Information_and_communications_technology" title="Information and communications technology">Information and<br>communications</a></div></th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em">

<ul><li><a href="Internet_of_things" title="Internet of things">Internet of things</a></li>

<li><a href="Artificial_intelligence" title="Artificial intelligence">Artificial intelligence</a>

<ul><li><a href="Applications_of_artificial_intelligence" title="Applications of artificial intelligence">Applications of artificial intelligence</a></li>

<li><a href="Machine_translation" title="Machine translation">Machine translation</a></li>

<li><a href="Machine_vision" title="Machine vision">Machine vision</a></li>

<li><a href="Mobile_translation" title="Mobile translation">Mobile translation</a></li>

<li><a href="Progress_in_artificial_intelligence" title="Progress in artificial intelligence">Progress in artificial intelligence</a></li>

<li><a href="Speech_recognition" title="Speech recognition">Speech recognition</a></li></ul></li>

<li><a href="Atomtronics" title="Atomtronics">Atomtronics</a></li>

<li><a href="Carbon_nanotube_field-effect_transistor" title="Carbon nanotube field-effect transistor">Carbon nanotube field-effect transistor</a></li>

<li><a href="Cybermethodology" title="Cybermethodology">Cybermethodology</a></li>

<li><a href="Augmented_reality" title="Augmented reality">Augmented reality</a></li>

<li><a href="Optical_disc#Fourth-generation" title="Optical disc">Fourth-generation optical discs</a>

<ul><li><a href="3D_optical_data_storage" title="3D optical data storage">3D optical data storage</a></li>

<li><a href="Holographic_data_storage" title="Holographic data storage">Holographic data storage</a></li></ul></li>

<li><a href="General-purpose_computing_on_graphics_processing_units" title="General-purpose computing on graphics processing units">GPGPU</a></li>

<li>Memory

<ul>

<li><a href="Electrochemical_RAM" title="Electrochemical RAM">ECRAM</a></li>

<li><a href="Millipede_memory" title="Millipede memory">Millipede</a></li>

<li><a href="Racetrack_memory" title="Racetrack memory">Racetrack memory</a></li>

<li><a href="SONOS" title="SONOS">SONOS</a></li>

<li><a href="UltraRAM" title="UltraRAM">UltraRAM</a></li></ul></li>

<li><a href="Optical_computing" title="Optical computing">Optical computing</a></li>

<ul><li><a href="Chipless_RFID" title="Chipless RFID">Chipless RFID</a></li></ul></li>

<li><a href="Software-defined_radio" title="Software-defined radio">Software-defined radio</a></li>

<li><a href="Three-dimensional_integrated_circuit" title="Three-dimensional integrated circuit">Three-dimensional integrated circuit</a></li></ul>

</div></td></tr></tbody></table><div></div></td></tr><tr><th scope="row" class="navbox-group" style="text-align: center;;width:1%">Topics</th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em">

<ul><li><a href="Automation" title="Automation">Automation</a></li>

<li><a href="Collingridge_dilemma" title="Collingridge dilemma">Collingridge dilemma</a></li>

<li><a href="Differential_technological_development" title="Differential technological development">Differential technological development</a></li>

<li><a href="Disruptive_innovation" title="Disruptive innovation">Disruptive innovation</a></li>

<li><a href="Ephemeralization" title="Ephemeralization">Ephemeralization</a></li>

<li><a href="Ethics_of_technology" title="Ethics of technology">Ethics</a>

<li><a href="Bioethics" title="Bioethics">Bioethics</a></li>

<li><a href="Cyberethics" title="Cyberethics">Cyberethics</a></li>

<li><a href="Neuroethics" title="Neuroethics">Neuroethics</a></li>

<li><a href="Robot_ethics" title="Robot ethics">Robot ethics</a></li></ul></li>

<li><a href="Exploratory_engineering" title="Exploratory engineering">Exploratory engineering</a></li>

<li><a href="Proactionary_principle" title="Proactionary principle">Proactionary principle</a></li>

<li><a href="Technological_change" title="Technological change">Technological change</a>

<ul><li><a href="Technological_unemployment" title="Technological unemployment">Technological unemployment</a></li></ul></li>

<li><a href="Technological_convergence" title="Technological convergence">Technological convergence</a></li>

<li><a href="Technological_evolution" title="Technological evolution">Technological evolution</a></li>

<li><a href="Technological_paradigm" title="Technological paradigm">Technological paradigm</a></li>

<li><a href="Technology_forecasting" title="Technology forecasting">Technology forecasting</a>

<ul><li><a href="Accelerating_change" title="Accelerating change">Accelerating change</a></li>

<li><a href="Future-oriented_technology_analysis" title="Future-oriented technology analysis">Future-oriented technology analysis</a></li>

<li><a href="Horizon_scanning" title="Horizon scanning">Horizon scanning</a></li>

<li><a href="Moore's_law" title="Moore's law">Moore's law</a></li>

<li><a href="Technological_singularity" title="Technological singularity">Technological singularity</a></li>

<li><a href="Technology_scouting" title="Technology scouting">Technology scouting</a></li></ul></li>

<li><a href="Technology_in_science_fiction" title="Technology in science fiction">Technology in science fiction</a></li>

<li><a href="Technology_readiness_level" title="Technology readiness level">Technology readiness level</a></li>

<li><a href="Technology_roadmap" title="Technology roadmap">Technology roadmap</a></li>

<li><a href="Transhumanism" title="Transhumanism">Transhumanism</a></li></ul>

</div></td></tr><tr><td class="navbox-abovebelow" colspan="2" style="text-align: center;"><div>

</div></td></tr></tbody></table></div></div><div><div class="zim-footer">

This article is issued from <a class="external text" title="Last edited on 2025-05-27" href="https://en.wikipedia.org/wiki/?title=Programmable_metallization_cell&oldid=1292489484">Wikipedia</a>. The text is available under <a class="external text" href="https://creativecommons.org/licenses/by-sa/4.0/deed.en">Creative Commons Attribution-Share Alike 4.0</a> unless otherwise noted. Additional terms may apply for the media files.

</div>

</div></div>

</div>

</main>

</div>

</body></html>